Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

Explaining the physical origin of the memory effect in glasses

Prof. Wang Junqiang's team at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS), has revealed the key role of activation entropy in the memory effect of glasses, ...

Toward next-generation molecule-based magnets

Magnets are deployed in a range of technology applications, including satellites, telephones and refrigerator doors. However, they are made up of heavy, inorganic materials whose component elements are, in some cases, of ...

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