A group of researchers from Tohoku University has unveiled a new material that exhibits enormous magnetoresistance, paving the way for developments in non-volatile magnetoresistive memory (MRAM).
Condensed Matter
Jun 9, 2023
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44
The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record, which had stood for 15 years.
General Physics
May 9, 2023
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22
In a paper published in Nature this week (April 13, 2023), researchers from The University of Manchester report record-high magnetoresistance that appears in graphene under ambient conditions.
Condensed Matter
Apr 12, 2023
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62
Researchers at the Department of Energy's SLAC National Accelerator Laboratory and Stanford University have created a new type of quantum material whose atomic scaffolding, or lattice, has been dramatically warped into a ...
Quantum Physics
Feb 22, 2023
1
290
While electrons are well known to carry both charge and spin, only the electric charge portion is used as an information carrier in modern electronic devices. However, the limits of modern electronics and the impending end ...
Condensed Matter
Nov 24, 2021
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66
Magnetoresistive random access memory (MRAM) is the top candidate for next-generation digital technology. However, manipulating MRAM efficiently and effectively is challenging. An interdisciplinary research team based at ...
Nanomaterials
Sep 24, 2020
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22
Most theories of solid state and soft matter physics were developed independently; thus, a few physical concepts are applicable to both. Recent research, however, particularly a study by Elbio Dagotto, found that correlated ...
In many materials, electrical resistance and voltage change in the presence of a magnetic field, usually varying smoothly as the magnetic field rotates. This simple magnetic response underlies many applications including ...
General Physics
Jun 21, 2019
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3
Researchers from Osaka University, in collaboration with the National Institute of Advanced Industrial Science and Technology (AIST) and Grenoble Alpes University, report an efficient technique for controlling the direction ...
Nanophysics
Jan 23, 2019
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84
A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density spin-transfer torque magnetoresistive random access memory (STT-MRAM) with a write speed of 14 ns for use in embedded ...
Hardware
Dec 28, 2018
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6
Magnetoresistance is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. The effect was first discovered by William Thomson (more commonly known as Lord Kelvin) in 1856, but he was unable to lower the electrical resistance of anything by more than 5%. This effect was later called ordinary magnetoresistance (OMR). More recent researchers discovered materials showing giant magnetoresistance (GMR), colossal magnetoresistance (CMR) and magnetic tunnel effect (TMR).
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